Creation of an antireflection coating for the optical range based on a nanoporous germanium layer formed by implantation with indium ions

The possibility of using a nanoporous Ge layer formed by implantation with 115 In + ions on monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion wafers performed at energy E=30 keV, current density in the beam J=5 μA/cm 2 , and dose D=1.8· 10 16 ion/cm . It shown that fabricated In:PGe spongy layer, which consists intertwining nanowires, is characterized low reflectivity (~ 5%) wide spectral range 250-1050 nm. Keywords: germanium, implantation, coating.